Aslanoglou, X., Assimakopoulos, P., Kokkoris, M., et al. (1998). Simulations of channeling spectra in the system p+ 28Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 140(3-4):294–302.
Aslanoglou, X., Karydas, A., Kokkoris, M., et al. (2000). Simulations and comparisons of channeling spectra in the p+ 28Si system in the backscattering geometry. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 161:524–527.
Azevedo, G. d. M., Behar, M., Dias, J. F., et al. (2002). Random and channeling stopping powers of He and Li ions in Si. Physical Review B, 65(7):075203.
Bentini, G., Bianconi, M., Nipoti, R., et al. (1991). Random and channeling stopping power of nitrogen in silicon in the 700–1500 kev range. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 53(1):1–6.
Bird, R. C. and Williams, J. S. (1989). Ion beams for materials analysis. Elsevier.
Culbertson, R., Withrow, S., and Barrett, J. (1984). Potential and stopping power information from ion channeling in Ge. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2(1-3):19–24.
Derry, T., Fearick, R., and Sellschop, J. (1981). Ion channeling in natural diamond. Minimum yields. Physical Review B, 24(7):3675.
Dettmann, K. and Robinson, M. (1974). Stopping power of fast protons under channeling conditions. Physical Review B, 10(1):1.
Eisen, F. (1968). Channeling of medium-mass ions through silicon. Canadian Journal of Physics, 46(6):561–572.
Eriksson, L., Davies, J., Johansson, N., et al. (1969). Implantation and annealing behavior of Group III and V dopants in silicon as studied by the channeling technique. Journal of Applied Physics, 40(2):842–854.
Erramli, H., Misdaq, M., and Blondiaux, G. (2000). Determination of the electronic energy loss of light ions in a silicon lattice by using the transmission ion channeling method. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 170(3-4):362–368.
Feldman, L. C., Mayer, J. W., and Picraux, S. T. (2012). Materials analysis by ion channeling: submicron crystallography. Academic Press.
Gehrmann, P., Lenkeit, K., and Stolle, R. (1985). Measurements of proton channeling energy losses in silicon in the intermediate energy region. Physica Status Solidi (B), 131(2):519–526.
Hetherington, D. (1996). Measurements of the random and channeled stopping powers for he ions in InP. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 115(1-4):319–322.
Jarvis, O., Sherwood, A., Whitehead, C., et al. (1977). Stopping power for fast channeled α particles in silicon. Physical Review B, 16(9):3880.
Jarvis, O., Sherwood, A., Whitehead, C., et al. (1979). Channeling of fast protons, deuterons, and α particles. Physical Review B, 19(11):5559.
Jiang, W., Grötzschel, R., Pilz, W., et al. (1999). Random and channeling stopping powers and charge-state distributions in silicon for 0.2–1.2 MeV/u positive heavy ions. Physical Review B, 59(1):226.
Kokkoris, M., Perdikakis, G., Kossionides, S., et al. (2003). On the dechanneling of protons in Si [110]. The European Physical Journal B-Condensed Matter and Complex Systems, 34(3):257–263.
Lenkeit, K., Trikalinos, C., Balashova, L., et al. (1990). Monte Carlo Simulation Analysis of Proton-Energy Spectra for Axial Channeling in Silicon in the Intermediate Energy Region. Physica Status Solidi (B), 161(2):513–524.
Madsen, K., Nielsen, H. B., and Tingleff, O. (2004). Methods for non-linear least squares problems.
Mayer, J. W., Eriksson, L., Picraux, S., et al. (1968). Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering. Canadian Journal of Physics, 46(6):663–673.
Petrovi´ c, S., Eri´ c, M., Kokkoris, M., et al. (2007). Gompertz type dechanneling functions for protons in < 100 >,< 110 > and < 111 > Si crystal channels. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 256(1):177–181.
Robinson, M. T. (1971). Deduction of interaction potentials from planar-channeling experiments. Physical Review B, 4(5):1461.
Roosendaal, H., Kool, W., Van Der Weg, W., et al. (1974). Critical angles and minimum yields for planar channeling. Radiation Effects, 22(2):89–99.
Sattler, A. R. and Dearnaley, G. (1967). Channeling in Diamond-type and Zinc-Blende lattices: comparative effects in channeling of protons and deuterons in Ge, GaAs, and Si. Physical Review, 161(2):244.
Shafiei, S. and Lamehi-Rashti, M. (2015). The effect of potential barrier on stopping power along axis-channel of silicon for protons. Journal of Nuclear Science and Technology (JonSat), 35(4):9–18.
Shao, L., Wang, Y., Nastasi, M., et al. (2006). Measurements of the stopping powers of He ions incident along the different channel axes and channel planes of Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 249(1-2):51–54.
Valdés, J., Vargas, P., and Arista, N. (2000). Energy losses of muons, pions, protons, and deuterons channeled in Si. Physical Review Letters, 85(22):4731.
Vos, M., Boerma, D., and Smulders, P. (1988). The relation between depth and energy in channeling experiments. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 30(1):38–43.
Ziegler, J. F., Ziegler, M. D., and Biersack, J. P. (2010). SRIM–The stopping and range of ions in matter (2010). Nu- clear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 268(11-12):1818–1823.