Radiation Physics and Engineering
A peer-reviewed journal published by K. N. Toosi University of Technology

Optimization of ¹⁴C Betavoltaic cells based on p-i-n structure

Articles in Press

Document Type : Research Article

Author

Najmeh Mohammadi

Physics Department‎, ‎Faculty of Sciences‎, ‎Sahand University of Technology‎, ‎Tabriz‎, ‎Iran

https://doi.org/10.22034/rpe.2026.589008.1374
Abstract
This research investigated the optimization of performance and the impact of intrinsic (i) layer thickness in betavoltaic batteries that utilize 14C radioactive sources combined with B-Ga2O3, GaAs, and GaN semiconductors in p-i-n junction configurations. Using Monte Carlo simulations and numerical analysis, the study optimized the doping concentrations and thickness of the i-layer. The findings indicated that, compared to the p-n betavoltaic batteries exposed to the same beta emitting source, p-i-n betavoltaic batteries exhibit better performance. The optimal i-layer thickness was found to be 22, 27, and 20 µm for 14C betavoltaic with B-Ga2O3, GaAs, and GaN semiconductor, respectively. With this optimized i-layer thickness, the maximum power density (Pm) increased by 0.50%, 1.50%, and 1.14% for B-Ga2O3, GaAs, and GaN, respectively respect to p-n junction structure. Additionally, the conversion efficiency of the p-i-n junction betavoltaic batteries improved by 0.50%, 1.48%, and 1.06% compared to their p-n junction counterparts with the same materials. This work offers valuable guidance for the optimal design of p-i-n betavoltaic batteries and enhancing maximum power density for various applications.

Highlights

  • The performance of betavoltaic battery with C-14 beta-emitting source was investigated for the p-i-n junction.
  • The optimal i-layer thickness was found to be 22, 27, and 20 µm for C-14 betavoltaic with B-Ga2O3, GaAs, and GaN.
  • The maximum output power density of the p-n junction battery were 21.13, 8.09, and 16.89 µW.cm−2, respectively.
  • The conversion efficiency of the p-i-n junction betavoltaic batteries improved by 0.50%, 1.48%, and 1.06%.

Keywords

p-i-n junction
Betavoltaic battery
14C beta-emitting source
i-layer thickness
Subjects

Copyright
RPE is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License (CC BY-NC 4.0).

Conflict of Interest
The authors declare no potential conflict of interest regarding the publication of this work‎.

Funding
‎The authors declare that no funds‎, ‎grants‎, ‎or other financial support were received during the preparation of this manuscript‎.

Radiation Physics and Engineering

Articles in Press, Accepted Manuscript
Available Online from 25 October 2026

  • Receive Date 28 June 2026
  • Revise Date 03 October 2026
  • Accept Date 22 October 2026

Home

Submit Manuscript

Reviewers

Contact Us