Fei, X.-X., Wang, Y., Luo, X., et al. (2020). Research of single-event burnout and hardened GaN MISFET with embedded PN junction. Microelectronics Reliability, 110:113699.
Gollapudi, S. and Omura, I. (2021). Altitude dependent failure rate calculation for high power semiconductor devices in aviation electronics. Japanese Journal of Applied Physics, 60(SB):SBBD19.
Grimes, D. R., Warren, D. R., and Partridge, M. (2017). An approximate analytical solution of the Bethe equation for charged particles in the radiotherapeutic energy range. Scientific Reports, 7(1):9781.
Kabza, H., Schulze, H.-J., Gerstenmaier, Y., et al. (1994). Cosmic radiation as a cause for power device failure and possible countermeasures. In Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics, pages 9–12. IEEE.
Khurelbaatar, L., Tumenjargal, T., Tumendemberel, B., et al. (2023). Space radiation induced failure rate calculation method using energy deposition probability function for high-voltage semiconductor device. Materials Today Communications, 35:105499.
Lu, J., Liu, J., Tian, X., et al. (2020). Impact of varied buffer layer designs on single-event response of 1.2-kV SiC power MOSFETs. IEEE Transactions on Electron Devices, 67(9):3698–3704.
Martinez, M., King, M. P., Baca, A. G., et al. (2018). Radiation response of AlGaN-channel HEMTs. IEEE Transactions on Nuclear Science, 66(1):344–351.
Patel, M. R. (2004). Spacecraft power systems. CRC press. Pocaterra, M. and Ciappa, M. (2023). Single event burnout failures caused in silicon carbide power devices by alpha particles emitted from radionuclides. e-Prime-Advances in Electrical Engineering, Electronics and Energy, 5:100203.
Reinhardt, K. C., Mayberry, C. S., and Glaister, D. S. (1998). Space power technology in power management and distribution electronics. Journal of Spacecraft and Rockets, 35(6):837–844.
Scheick, L. (2014). Determination of single-event effect application requirements for enhancement mode gallium nitride hemts for use in power distribution circuits. IEEE Transactions on nuclear science, 61(6):2881–2888.
Soelkner, G., Kaindlb, W., Schulzea, H., et al. (2004). Reliability of power electronic devices against cosmic radiation-induced. Microelectron Reliab, 44:1399–1406.
Srivastava, A. K., Saini, N., Chatterjee, P., et al. (2023). Tcad simulation of the mixed irradiated n-MCz Si detector: Impact on space charges, electric field distribution. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1049:168031.
Waskiewicz, A., Groninger, J., Strahan, V., et al. (1986). Burnout of power MOS transistors with heavy ions of californium-252. IEEE Transactions on Nuclear Science, 33(6):1710–1713.
Wu, W., Xu, W., Qu, K., et al. (2023). Comprehensive investigation on different ions of geostationary orbit induced single event burnout in GaN HEMT power devices. Microelectronics Reliability, 149:115187.
